Year | 2008 |
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Authors | Wen-Syang Hsu ,Cheng, P.L., Liao, C.I., Chien, C.C., Yang, C.L., Ting, S.F., Jeng, L.S., Huang, C.T., Cheng, Osbert, Tzou, S.F., and Hsu, W. |
Paper Title | Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS |
Journal Title | Materials Chemistry and Physics |
Vol.No | 107 |
Issue.No | 2-3 |
Page(s) | 471-475 |
Level Type | SCI |
Total Pages | 5 |
Language | English |